Title :
Electric-field-induced refractive index variation in quantum-well structure
Author :
Yamamoto, H. ; Asada, M. ; Suematsu, Y.
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
The refractive index variation in a quantum-well structure by an electric field is given theoretically. The calculated variation is ¿1% for an applied field of 3.1×105 V/cm in a 300 Å-thick GaInAsP/InP single quantum well, which is about 39 times larger than the bulk value. A semiconductor quantum-well structure is found theoretically to be a new material with a larger electro-optic coefficient. Application to a new optical switching device is also suggested.
Keywords :
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; refractive index; semiconductor superlattices; GaInAsP/InP; III-V semiconductors; electric field; electro-optic coefficient; optical switching device; quantum-well structure; refractive index variation; semiconductor superlattices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850409
