Title :
Gigahertz band GaAs monolithic limiting amplifier
Author :
Akazawa, Y. ; Wakimoto, T. ; Kikuchi, H. ; Kawarada, K. ; Kato, N. ; Ohwada, K.
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
The letter presents the design and performance of a gigahertz band limiting amplifier IC using GaAs MESFET IC technology. With a two-chip connection, an AM/PM conversion of 0.7°/dB over 43 dB input dynamic range at 1 GHz has been achieved.
Keywords :
III-V semiconductors; field effect integrated circuits; microwave amplifiers; microwave integrated circuits; AM/PM conversion; GaAs MESFET IC technology; GaAs monolithic limiting amplifier; III-V semiconductors; amplifier IC; dynamic range; gigahertz band; two-chip connection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850557
