DocumentCode
1010314
Title
InGaAs PIN photodetectors with modulation response to millimetre wavelengths
Author
Bowers, John E. ; Burrus, C.A. ; McCoy, R.J.
Author_Institution
AT&T Bell Laboratories, Holmdel, USA
Volume
21
Issue
18
fYear
1985
Firstpage
812
Lastpage
814
Abstract
The transit-time and parasitic limitations on the bandwidth of PIN photodetectors are described and compared with experimental results. Packaged InGaAs photodetectors with measured 3 dB response to 36 GHz (8.3 mm wavelength) have been made.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; microwave detectors; photodetectors; 3 dB response; 36 GHz; InGaAs PIN photodetectors; bandwidth; millimetre wavelengths; modulation response; parasitic limitations; transit-time;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850573
Filename
4251373
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