Title :
Room-temperature GaInAsSb/AlGaAsSb DH injection lasers at 2.2 μm
Author :
Caneau, Catherine ; SRIVASTAVA, ANURAG K. ; Dentai, A.G. ; Zyskind, J.L. ; Pollack, M.A.
Author_Institution :
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Abstract :
Double-heterostructure lasers based on the GaInAsSb/AlGaAsSb system have been prepared by liquid-phase epitaxy and operated in the 2.2 μm-wavelength region. Room-temperature, pulsed threshold current densities of 6 kA/cm2 and characteristic temperatures of T0= 85 K have been obtained.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium antimonide; indium compounds; semiconductor junction lasers; GaInAsSb/AlGaAsSb DH injection lasers; characteristic temperature 85K; liquid-phase epitaxy; pulsed threshold current density 6.9 kA/cm2; room temperature operation; semiconductor laser; wavelength 2.2 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850575
