Title :
1.55 μm InGaAsP low-threshold buried-crescent injection laser
Author :
Cheng, W.H. ; Perillo, L. ; Forouhar, S. ; Kim, O.K. ; Jiang, C.L. ; Sheem, S.K.
Author_Institution :
Rockwell International Corporation, Collins Transmission System Division, Dallas, USA
Abstract :
Fabrication of 1.55 μm InGaAsP buried-crescent (BC) injection lasers with a p-n-p-n blocking structure is described. The BC lasers exhibit a threshold current as low as 14 mA at 25°C, very high yield, output power more than 10 mW and high-temperature operation up to 80°C. These BC lasers have continued to operate in stable CW mode at 50°C for more than 1000 h. The lifetime of the 1.55 μm InGaAsP lasers at 50°C is estimated to exceed about 2.5 × 104 h.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; semiconductor junction lasers; InGaAsP low-threshold buried-crescent injection laser; high-temperature operation; lifetime; output power 10 mW; p- n- p- n blocking structure; semiconductor laser; stable CW mode; threshold current 14 mA; wavelength 1.55 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850588
