Title :
Required grading length to eliminate the heterojunction spike in npn In0.52Al0.48As/In0.53Ga0.47As/InP bipolar transistors
Author :
Chand, Naresh ; Morko¿¿, H.
Author_Institution :
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA
Abstract :
Energy-band diagrams have been studied for n-In0.52Al0.48As/p-In0.53Ga0.47As heterojunctions employing different compositional gradings for heterojunction bipolar transistor applications, and the minimum grading widths were calculated for eliminating the conduction-band spike barrier.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; In0.52Al0.48As-In0.53Ga0.47 As p-n heterojunctions; In0.52Al0.48As-In0.53Ga0.47 As-InP n-p-n bipolar transistors; compositional gradings; conduction-band spike barrier; energy load diagrams; grading length; heterojunction bipolar transistor; heterojunction spike; minimum grading widths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850593
