DocumentCode :
1010534
Title :
Comment: Effect of magnetic field on n+nn+ GaAs ballistic diode
Author :
Van Zeghbroeck, B.J.
Author_Institution :
IBM Zurich Research Laboratory, Rÿschlikon, Switzerland
Volume :
21
Issue :
19
fYear :
1985
Firstpage :
848
Keywords :
III-V semiconductors; electric impedance; gallium arsenide; semiconductor diodes; AC impedance; GaAs n+-n-n+ ballistic diode; admittance; equation of motion; magnetic field; momentum relaxation term;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850597
Filename :
4251399
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1010534
