DocumentCode
1010788
Title
A theory of voltage breakdown of cylindrical P-N junctions, with applications
Author
Armstrong, Harold L.
Author_Institution
Natl. Res. Council of Canada
Volume
4
Issue
1
fYear
1957
Firstpage
15
Lastpage
16
Abstract
In certain p-n junctions, such as those made by the alloy method, edges on the junction surface will, by field concentration, lead to lower inverse breakdown voltages than would otherwise be obtained. These edges are approximated by pieces of circular cylinders, and a formula for the voltage breakdown of a circular cylindrical junction obtained. The results agree qualitatively with those found for certain alloy-type diodes.
Keywords
Breakdown voltage; Dielectric breakdown; Diodes; Electric breakdown; Electron devices; Electron mobility; Geometry; Helium; Lead; P-n junctions; Shape; Shape memory alloys;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1957.14194
Filename
1472173
Link To Document