• DocumentCode
    1010799
  • Title

    Base-width modulation and the high-frequency equivalent circuit of junction transistors

  • Author

    Zawels, Jakob

  • Author_Institution
    S. A. Iron & Steel Industrial Corp., Ltd., Pretoria, S. Africa
  • Volume
    4
  • Issue
    1
  • fYear
    1957
  • Firstpage
    17
  • Lastpage
    22
  • Abstract
    The effect of base-width modulation on the exact small-signal, high-frequency equivalent circuit of p-n-p (and n-p-n) junction transistors is examined. It is found that (except for the effect on the base spreading resistance) base-width modulation only helps to determine the magnitude of one element. Failure to recognize this fact has resulted in the past in the "discovery" of "new" elements and the creation of a multiplicity of equivalent circuits. Through the use of an engineering approach, the most important of these circuits are related to the exact circuit, and hence their degree of approximation becomes apparent. The effect of a high injection level of minority carriers is also mentioned. Finally, the equivalent circuit of p-n-i-p (and n-p-i-n) transistors is discussed.
  • Keywords
    Aerospace industry; Africa; Electron devices; Equivalent circuits; Frequency; Impedance; Iron; Metals industry; P-n junctions; Steel; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2430
  • Type

    jour

  • DOI
    10.1109/T-ED.1957.14195
  • Filename
    1472174