Title :
Experimental verification of a VMOS UHF power transistor model and design
Author :
Plessis, M. Du ; Rademeyer, P.
Author_Institution :
University of Pretoria, Carl & Emily Fuchs Institute for Microelectronics, Pretoria, South Africa
Abstract :
A high-frequency model for VMOS power transistors has been developed. Using this model a VMOS transistor was designed to achieve 10 dB maximum stable gain at a frequency of 1 GHz. In the design the static parameters of breakdown voltage and on-resistance were also optimised. The experimental results verified the model and showed excellent agreement.
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; UHF; VMOS; breakdown voltage; high-frequency model; maximum stable gain; on-resistance; power transistor model; static parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850622
