Improved frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions

Author

Holden, W.S. ; Campbell, Joe C. ; Ferguson, J.F. ; Dentai, A.G. ; Jhee, Y.K.

Author_Institution

AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA

Volume

21

Issue

20

fYear

1985

Firstpage

886

Lastpage

887

Abstract

We report very high-speed operation of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading and multiplication regions (SAGM-APDs). For low multiplication values (M0Â¿7) the bandwidth of these APDs is relatively insensitive to the gain and is determined by the hole transit time and the RC time constant. In this gain region bandwidths as high as 5.5 GHz have been achieved. For higher multiplication values the frequency response exhibits a constant gain-bandwidth product. We have observed gain-bandwidth products as high as 40 GHz, the highest value reported to date for a device of this type.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; III-V semiconductors; InP/InGaAsP/InGaAs avalanche photodiodes; R C time constant; SAGM-APD; bandwidth; frequency response; gain-bandwidth product; high-speed operation; hole transit time; multiplication values; separate absorption grading multiplication regions;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19850625

Filename

4251428