• DocumentCode
    1010864
  • Title

    High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPE

  • Author

    Nelson, A.W. ; Devlin, W.J. ; Hobbs, R.E. ; Lenton, C.G.D. ; Wong, S.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    21
  • Issue
    20
  • fYear
    1985
  • Firstpage
    888
  • Lastpage
    889
  • Abstract
    BH laser devices with efficient optical and current confinement have been grown using a new all-MOVPE growth technique. The devices produced operated with CW threshold currents as low as 14 mA and output powers of up to 28 mW at 20μC. In initial experiments, over 70% of the working devices tested had threshold currents of less than 30 mA, substantiating the view that MOVPE is a highly promising technique for the large-scale production of complex optoelectronic devices.
  • Keywords
    optical fibres; optical links; semiconductor junction lasers; vapour phase epitaxial growth; CW threshold currents; all-MOVPE growth technique; buried heterostructure; complex optoelectronic devices; current confinement; large-scale production; low-threshold BH lasers; output powers; wavelength 1.52 micron;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850626
  • Filename
    4251429