DocumentCode
1010864
Title
High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPE
Author
Nelson, A.W. ; Devlin, W.J. ; Hobbs, R.E. ; Lenton, C.G.D. ; Wong, S.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
21
Issue
20
fYear
1985
Firstpage
888
Lastpage
889
Abstract
BH laser devices with efficient optical and current confinement have been grown using a new all-MOVPE growth technique. The devices produced operated with CW threshold currents as low as 14 mA and output powers of up to 28 mW at 20μC. In initial experiments, over 70% of the working devices tested had threshold currents of less than 30 mA, substantiating the view that MOVPE is a highly promising technique for the large-scale production of complex optoelectronic devices.
Keywords
optical fibres; optical links; semiconductor junction lasers; vapour phase epitaxial growth; CW threshold currents; all-MOVPE growth technique; buried heterostructure; complex optoelectronic devices; current confinement; large-scale production; low-threshold BH lasers; output powers; wavelength 1.52 micron;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850626
Filename
4251429
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