Title :
A proposed method for dynamic fitting of MOS model parameters
Author :
Kovács, Ferenc ; Hosszú, Gábor
Author_Institution :
Dept. of Electron Devices, Tech. Univ. of Budapest, Hungary
fDate :
10/1/1993 12:00:00 AM
Abstract :
A method for optimization of MOS model parameters is introduced. The method is based upon dynamically fitting the measured frequency response of a reconfigurable ring oscillator. The ring oscillator contains two added switching transistors and two loading capacitors. By controlling the switching transistors, the capacitive load of the inverters and thus the oscillation frequency can be varied. The simulated and the measured frequencies are compared and the derived average error is minimized. Sequential iterations using combined mathematical methods are applied to the procedure. Simplifications are introduced in order to shorten the computational time. The effectiveness of the method on improving the accuracy of simulation is demonstrated with numerical examples
Keywords :
MOS integrated circuits; frequency response; insulated gate field effect transistors; invertors; semiconductor device models; MOS model parameters; capacitive load; computational time; derived average error; dynamic fitting; frequency response; inverters; loading capacitors; optimization; reconfigurable ring oscillator; switching transistors; Circuit simulation; Circuit testing; Computational modeling; Frequency measurement; Frequency response; Inverters; Logic circuits; Optimization methods; Propagation delay; Ring oscillators;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
