A novel hierarchical approach for proximity effect correction in electron beam lithography

An efficient CAD pattern processing algorithm based on dose modulation technique is proposed for proximity effect correction calculation in electron beam (EB) lithography. The algorithm resolves a costly and lengthy computation during the pattern processing. First, the original pattern data with multiple-level cell hierarchy is reduced to pattern data with two-level cell hierarchy. Then, a zoning algorithm with dual-frame technique is introduced for realizing the hierarchical proximity correction calculation. Here, the zone is a region of pattern assembly to be proximity-corrected and the frame is a pattern reference region to incorporate the backscattering effects of electrons exposed on the frame into the zone data. The algorithm is applied to typical design layers of 64-Mb DRAM pattern data. The final EB data volume is greatly compacted by a factor of 22-150 compared with a conventional hierarchy-flattened method. The hierarchical approach is indispensable to the accurate proximity correction for next-generation high-density VLSIs