Title :
Three-terminal operation of InAs-coupled Josephson devices by quasiparticle injection
Author :
Inoue, Ken ; Kawakami, Tomoya
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Three-terminal Nb/InAs/Nb Josephson junctions with a metal-semiconductor (MES) gate are developed. Super-current is controlled by injecting quasiparticles into the coupling region. The devices have a planar geometry with a self-aligned gate isolation using Nb native oxide.
Keywords :
III-V semiconductors; Josephson effect; indium compounds; quasi-particles; superconducting junction devices; III-V semiconductors; InAs-coupled Josephson devices; Nb native oxide; coupling region; metal-semiconductor (MES) gate; planar geometry; quasiparticle injection; self-aligned gate isolation; three terminal Nb/InAs/Nb Josephson junctions; three terminal operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850649
