DocumentCode
1011118
Title
Measurement and modelling of high-linearity partially depleted absorber photodiode
Author
Beling, Andreas ; Pan, H. ; Chen, Huanting ; Campbell, Joe C.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA
Volume
44
Issue
24
fYear
2008
Firstpage
1419
Lastpage
1420
Abstract
Third-order intermodulation distortions of an InGaAs/InP partially depleted absorber photodiode (PDA-PD) using high doping levels for both p-type and n-type absorbers are characterised using a two-tone measurement technique. The third-order local intercept point (IP3) of the device increases only slightly with frequency, and remains as high as 39 dBm up to 20 GHz. The frequency characteristics of the IP3 can be well explained by an equivalent circuit model.
Keywords
III-V semiconductors; doping profiles; equivalent circuits; gallium arsenide; indium compounds; photodiodes; semiconductor device models; InGaAs-InP; doping levels; equivalent circuit model; high-linearity partially depleted absorber photodiode; n-type absorbers; p-type absorber; third-order local intercept point; two-tone measurement technique;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20089792
Filename
4689494
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