Title :
Optimised HEMT structure with an Al0.45 Ga0.55As spacer and an Al0.20Ga0.80As doped region
Author :
Huang, J.C. ; Wicks, G.W. ; Calawa, A.R. ; Eastman, L.F.
Author_Institution :
Cornell University, Department of Applied Physics, Ithaca, USA
Abstract :
We have obtained an optimised HEMT structure with a high 2DEG sheet concentration of 1×1012 cm¿2 while maintaining a high 77 K electron Hall mobility of 120,000 cm2/Vs. The structure utilises a 45% Al mole fraction AlGaAs barrier and a 20% Al mole fraction doped region. It has little or no light sensitivity at 77 K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; 77K; Al0.20Ga0.80As doped region; Al0.45Ga0.55As spacer; HEMT; III-V semiconductors; MODFET; electron Hall mobility; high electron mobility transistor; modulation doping; optimised structure; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850654
