Title :
Polishing damages to electrical properties of BLT thin-film capacitors fabricated by damascene process
Author :
Kim, N.-H. ; Jung, P.-G. ; Shin, Soo-Hwan ; Kim, Jung-Ho ; Lee, H.-Y. ; Lee, Woo-sang
Author_Institution :
Res. Inst. for Catalysis, Chonnam Nat. Univ., Gwangju
Abstract :
Polishing pressure in the damascene process for BLT thin films improves the removal rate and surface roughness; however, the electrical properties of BLT capacitors fabricated by the damascene process with high pressure worsened. Therefore, low pressure was suitable for BLT capacitors fabricated by the damascene process when considering the electrical properties.
Keywords :
bismuth compounds; chemical mechanical polishing; lanthanum compounds; surface roughness; thin film capacitors; (BiLa)Ti3O12; damascene process; polishing damages; surface roughness; thin-film capacitors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20082036
