Title :
Cryogenic operation of pseudomorphic AlGaAs/InGaAs single-quantum-well MODFETs
Author :
Masselink, W. Ted ; Ketterson, Andrew ; Klem, J. ; Kopp, W. ; Morko¿¿, H.
Author_Institution :
University of Illinois at Urbana-Champaign, Coordinated Science Laboratory, Urbana, USA
Abstract :
We have investigated the 77 K operation of AlGaAs/InGaAs MODFETs. The structures, grown by MBE, make use of a 200 Å undoped In0.15Ga0.85As quantum well for electron confinement and an Si-doped Al0.15Ga0.85As top barrier. The MODFETs with 1 ¿m gate lengths exhibit extrinsic transconductances of 360 mS/mm and maximum currents of 310 mA/mm at 77 K. The use of a low Al mole fraction AlGaAs/InGaAs heterojunction allows us to avoid the persistent trapping effects encountered in AlGaAs/GaAs MODFETs without sacrificing device performance.
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; 77K operation; AlGaAs/InGaAs; HEMT; III-V semiconductors; MBE; MODFETs; Si-doped Al0.15Ga0.85As top barrier; cryogenic operation; electron confinement; heterojunction; high electron mobility transistor; modulation doping; molecular beam epitaxy; pseudomorphic type; single-quantum-well; trapping effects; undoped In0.15Ga0.85As quantum well;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850663
