Title :
A high-frequency diffused base silicon transistor
Author :
Holonyak, N.H. ; Hittinger, W.D.
fDate :
4/1/1957 12:00:00 AM
Keywords :
Alloying; Aluminum; Birefringence; Capacitance; Contracts; Germanium; Laboratories; Optical polarization; Oscillators; Silicon; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1957.14242
