DocumentCode :
1011341
Title :
10-30 GHz monolithic GaAs travelling-wave divider/combiner
Author :
Tserng, Hua-Quen ; Saunier, Paul
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume :
21
Issue :
21
fYear :
1985
Firstpage :
950
Lastpage :
951
Abstract :
A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.
Keywords :
III-V semiconductors; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; waveguide components; bandwidth 10 to 30 GHz; design centre frequency 20 GHz; input VSWR; insertion loss; microwave performance; monolithic GaAs power FET amplifiers; monolithic GaAs travelling-wave divider/combiner; output VSWR; power combiner; power divider;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850671
Filename :
4251479
Link To Document :
بازگشت