Title :
High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells
Author :
Wakita, Ken ; Kawamura, Yuriko ; Yoshikuni, Y. ; Asahi, H. ; Uehara, Satoshi
Author_Institution :
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Abstract :
A long-wavelength optical modulator has been fabricated which makes use of an electroabsorption effect in multiple quantum wells (MQWs). Here, InGaAs/InAlAs MQWs are prepared in a PIN configuration using molecular beam epitaxy (MBE). The rise time of the detected pulse modulation signal has been measured at 190 ps. This response level has been attributed to the detecting system response and RC time constant, and not to such intrinsic effects as carrier lifetime.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor superlattices; III-V semiconductor; InGaAs/InAlAs multiple quantum wells; PIN configuration; R C time constant; detecting system response; electroabsorption effect; long-wavelength optical modulation; molecular beam epitaxy; pulse modulation signal; response level; rise time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850672
