DocumentCode :
1011366
Title :
Enhancement of Kerr rotation with amorphous Si film
Author :
Nakamura, K. ; Asaka, T. ; Asari, S. ; Ota, Y. ; Itoh, A.
Author_Institution :
ULVAC Corporation, Chiba, Japan
Volume :
21
Issue :
5
fYear :
1985
fDate :
9/1/1985 12:00:00 AM
Firstpage :
1654
Lastpage :
1656
Abstract :
The enhancemant of the Kerr rotation angle with amorphous silicon film was investigated. Doping oxygen, nitrogen and carbon as impurity in a-Si films, the absorptance at the semiconductor laser wavelength becomes almost zero keeping high refractive index. With the a-Si film containing the impurities on magnetic film, large enhancement effect is achieved than that of dielectric film. With a-Si:24at%O films, θk becomes a large value of 80 min comparing with 25 min of Gd-Tb-Fe-Co single layer film. The 
was improved 2 times higher than that of single layer film.
was improved 2 times higher than that of single layer film.Keywords :
Amorphous semiconductor materials/devices; Magnetooptic Kerr effect; Magnetooptic memories; Semiconductor films; Silicon materials/devices; Amorphous materials; Amorphous silicon; Magnetic films; Nitrogen; Optical films; Refractive index; Semiconductor device doping; Semiconductor films; Semiconductor impurities; Semiconductor lasers;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1985.1063911
Filename :
1063911
Link To Document :
