Title :
Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components
Author :
Soref, R.A. ; Lorenzo, J.P.
Author_Institution :
US Air Force, Rome Air Development Center, Solid State Sciences Division, Bedford, USA
Abstract :
The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.
Keywords :
elemental semiconductors; integrated optics; optical waveguide components; semiconductor epitaxial layers; silicon; active components; end-fire coupling; epitaxial layers; heavily doped Si substrate; integrated-optical components; intersecting channel waveguides; intrinsic Si layer; optical power divider; plasma-etching; semiconductor; single crystal Si; wavelength 1.3 microns; wavelengths 1.6 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850673
