Title :
Fabrication of n+ ledge channel structure for GaAs FETs with a single lithography step
Author :
Macksey, H.M. ; Hudgens, R.D.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Abstract :
A self-aligned process has been developed using multiple resist layers to fabricate the n+ ledge channel structure on GaAs FETs with a single lithography step. The new process eliminates one critical alignment step and has greater flexibility for the control of channel parameters. Power FET performance is comparable to that of conventionally produced devices.
Keywords :
III-V semiconductors; electron beam lithography; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; GaAs FETs; electron beam lithography; microwave performance; multiple resist layers; n+ ledge channel structure; power FET; self-aligned process; single lithography step;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850675
