• DocumentCode
    1011541
  • Title

    Postmetallisation annealing of aluminium-silicon gate MOS capacitors

  • Author

    McGillivray, I. ; Robertson, J.M. ; Walton, A.J.

  • Author_Institution
    University of Edinburgh, Edinburgh Microfabrication Facility Department of Electrical Engineering, Edinburgh, UK
  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    973
  • Lastpage
    974
  • Abstract
    Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.
  • Keywords
    annealing; electron traps; interface electron states; metal-insulator-semiconductor structures; metallisation; Al gate; AlSi gate; MOS capacitors; midgap interface trap densities; postmetallisation annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850689
  • Filename
    4251506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011541