Title :
Postmetallisation annealing of aluminium-silicon gate MOS capacitors
Author :
McGillivray, I. ; Robertson, J.M. ; Walton, A.J.
Author_Institution :
University of Edinburgh, Edinburgh Microfabrication Facility Department of Electrical Engineering, Edinburgh, UK
Abstract :
Postmetallisation annealing (PMA) is widely used to reduce midgap interface trap densities in aluminium gate MOS structures. It is shown that the presence of 1% silicon in the aluminium inhibits PMA and that increased PMA times result in an increase rather than a decrease in midgap interface trap densities for AlSi.
Keywords :
annealing; electron traps; interface electron states; metal-insulator-semiconductor structures; metallisation; Al gate; AlSi gate; MOS capacitors; midgap interface trap densities; postmetallisation annealing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850689
