Title :
Logic performance of Si3N4-n GaAs quasinormally off MISFETs
Author :
Harrison, Andrew J. ; Swanson, J.G.
Author_Institution :
King´s College (KQC), Department of Electronics, London, UK
Abstract :
n-GaAs MISFETs can be operated in a quasinormally off mode using charge stored in interface states to shift the threshold voltage. The transition from static to dynamic operation can be shown to explain the logic levels achievable. Ring oscillator results predict very promising gate delays and speed-power products.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; insulated gate field effect transistors; integrated logic circuits; silicon compounds; III-V semiconductors; MISFETs; Si3N4 insulator; dynamic operation; monolithic logic IC; n-type GaAs; quasinormally off mode; ring oscillator implementation; static operation; threshold voltage shifting;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850691
