Proposal and analysis of resonant tunnelling diode with single peaked I-V characteristics

A novel resonant tunnelling diode with single peaked I-V characteristics is proposed. In this diode, the resonant tunnelling effect in a vertical double barrier structure is coupled with the pinch-off effect in a lateral collector just beneath the structure. Using a one-dimensional distributed parameter model, the dependence of the I-V characteristics on the device parameters (emitter width and collector thickness) is investigated systematically