DocumentCode
1011575
Title
Floating base thyristor
Author
Baliga, B. Jayant
Author_Institution
Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC
Volume
31
Issue
18
fYear
1995
fDate
8/31/1995 12:00:00 AM
Firstpage
1613
Lastpage
1615
Abstract
The floating base thyristor (FBT) is a new thyristor structure in which its p-base region, containing a p+ region is not shorted to the n+ emitter. Using the DMOS process, an n-channel and a p-channel MOSFET are integrated with the thyristor structure. The device operates in the thyristor mode with a low ON-state voltage drop at even high current densities when a positive bias is applied to, both gates. When a negative bias is applied to the OFF gate, the device operates in the IGBT mode with the saturated current controlled by the positive bias applied to the ON gate
Keywords
MOS-controlled thyristors; DMOS process; IGBT; floating base thyristor; n-channel MOSFET; p-channel MOSFET;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951083
Filename
469135
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