Author_Institution :
Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC
Abstract :
The floating base thyristor (FBT) is a new thyristor structure in which its p-base region, containing a p+ region is not shorted to the n+ emitter. Using the DMOS process, an n-channel and a p-channel MOSFET are integrated with the thyristor structure. The device operates in the thyristor mode with a low ON-state voltage drop at even high current densities when a positive bias is applied to, both gates. When a negative bias is applied to the OFF gate, the device operates in the IGBT mode with the saturated current controlled by the positive bias applied to the ON gate
