Measurement of linewidth broadening factor in gain-switched InGaAsP injection lasers by CHP method

Author

Osi¿¿ski, M. ; Gallagher, Dominic F. G. ; White, Ian H.

Author_Institution

Cambridge University, Department of Engineering, Cambridge, UK

Volume

21

Issue

21

fYear

1985

Firstpage

981

Lastpage

982

Abstract

First measurements of the semiconductor laser linewidth broadening factor Â¿ using a recently proposed CHP (chirp-halfwidth product) method are reported. Gain-switched optical pulses have been generated by sinusoidal RF and comb generator drive. The simultaneous recording of streak-camera and monochromator traces provides the required data for determination of Â¿. The values of Â¿ between 6 and 7.5 are obtained for a 1.3 Â¿m mesa laser. Computer simulations predict that the CHP formula should provide an estimate of Â¿ within Â±15% for either comb generator or hard sinusoidal drive.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; optical modulation; semiconductor junction lasers; spectral line breadth; 1 GHz laser modulation; 1.3 micron wavelength; CHP method; III-V semiconductors; InGaAsP injection lasers; chirp-halfwidth product; comb generator drive; computer simulation; gain switched optical pulses; laser variables measurement; linewidth broadening factor; mesa laser; monochromator traces; semiconductor laser; sinusoidal RF;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19850694

Filename

4251513