DocumentCode :
1011586
Title :
Measurement of linewidth broadening factor in gain-switched InGaAsP injection lasers by CHP method
Author :
Osi¿¿ski, M. ; Gallagher, Dominic F. G. ; White, Ian H.
Author_Institution :
Cambridge University, Department of Engineering, Cambridge, UK
Volume :
21
Issue :
21
fYear :
1985
Firstpage :
981
Lastpage :
982
Abstract :
First measurements of the semiconductor laser linewidth broadening factor ¿ using a recently proposed CHP (chirp-halfwidth product) method are reported. Gain-switched optical pulses have been generated by sinusoidal RF and comb generator drive. The simultaneous recording of streak-camera and monochromator traces provides the required data for determination of ¿. The values of ¿ between 6 and 7.5 are obtained for a 1.3 ¿m mesa laser. Computer simulations predict that the CHP formula should provide an estimate of ¿ within ±15% for either comb generator or hard sinusoidal drive.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser variables measurement; optical modulation; semiconductor junction lasers; spectral line breadth; 1 GHz laser modulation; 1.3 micron wavelength; CHP method; III-V semiconductors; InGaAsP injection lasers; chirp-halfwidth product; comb generator drive; computer simulation; gain switched optical pulses; laser variables measurement; linewidth broadening factor; mesa laser; monochromator traces; semiconductor laser; sinusoidal RF;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850694
Filename :
4251513
Link To Document :
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