Title :
PnP-type InP/InGaAsP/InP bipolar transistor
Author :
Su, L.M. ; Schroeter-Janssen, H. ; Li, K.C. ; Grote, N.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Berlin, West Germany
Abstract :
A PnP double-heterostructure InGaAsP/InP bipolar transistor was fabricated which is capable of bilateral operation. Forward and reverse current gains of about 15 and 5, respectively, were achieved. In the emitter-up configuration, an offset voltage of 1 V, believed to be due to the valence band discontinuity at the base/collector heterojunction, occurs in the Ic/VCE characteristics.
Keywords :
III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; 1 V offset voltage; III-V semiconductors; InGaAsP/InP; PNP type; bilateral operation; bipolar transistor; double-heterostructure; emitter-up configuration; p-n-p type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850699
