Title :
Measurement of optical bistability in an InGaAsP laser amplifier at 1.5 μm
Author :
Westlake, H.J. ; Adams, M.J. ; O´Mahony, M.J.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Measured hysteresis characteristics for an amplifier operating at room temperature are presented and compared with the predictions of a computer model. The onset of optical bistability was seen to occur at input powers of around 2 μW.
Keywords :
III-V semiconductors; gallium arsenide; hysteresis; indium compounds; laser variables measurement; optical bistability; semiconductor junction lasers; 1.5 microns wavelength; 2 microwatt input power; III-V semiconductors; InGaAsP; amplifier characterisation; computer model; hysteresis characteristics; laser amplifier; measurement; nonlinear optics; optical bistability; room temperature operation; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850701
