DocumentCode :
1011676
Title :
Implementing Decay Techniques using 4T Quasi-Static Memory Cells
Author :
Juang, Philo ; Diodato, Phil ; Kaxiras, Stefanos ; Skadron, Kevin ; Hu, Zhigang ; Martonosi, Margaret ; Clark, Douglas W.
Volume :
1
Issue :
1
fYear :
2002
Firstpage :
10
Lastpage :
10
Abstract :
This paper proposes the use of four-transistor (4T) cacheand branch predictor array cell designs to address increasingworries regarding leakage power dissipation. While 4T designslose state when infrequently accessed, they have very lowleakage, smaller area, and no capacitive loads to switch. Thisshort paper gives an overview of 4T implementation issues anda preliminary evaluation of leakage-energy savings that showsimprovements of 60-80%
Keywords :
Circuit simulation; Delay; Leakage current; Libraries; Microarchitecture; Power dissipation; Power generation; Random access memory; Switches; Transistors;
fLanguage :
English
Journal_Title :
Computer Architecture Letters
Publisher :
ieee
ISSN :
1556-6056
Type :
jour
DOI :
10.1109/L-CA.2002.5
Filename :
1650112
Link To Document :
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