Title :
Medium-power, high-speed N-P-N germanium alloy transistors
Author :
Hughes, H.E. ; Robillard, T.R. ; Westberg, R.W.
Author_Institution :
Bell Telephone Labs. Inc., Allentown, Pa.
fDate :
4/1/1957 12:00:00 AM
Keywords :
Alloying; Breakdown voltage; Coaxial components; Doping; Germanium alloys; Laboratories; Power dissipation; Power transistors; Pulse amplifiers; Pulse shaping methods; Stripline; Transient response; Welding;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1957.14281
