DocumentCode
1011711
Title
Delay-triggered optical switching in twin-stripe IRW lasers
Author
MacLean, D. ; White, I.H. ; Carroll, J.E. ; Plumb, R.G.
Author_Institution
University of Cambridge, Engineering Department, Cambridge, UK
Volume
21
Issue
21
fYear
1985
Firstpage
999
Abstract
We report a novel switching mechanism in InGaAsP twin-stripe IRW lasers operating under pulsed conditions at 1.3 ¿m wavelength. An interesting feature of the switch is its ability to discriminate differential delays between the arrival of 10 ns rise time drive pulses to a resolution of less than 200 ps. The switch is caused by changes in the charge carrier density of less than 0.5% which suggests subpicojoule switching energies.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor junction lasers; switching; 1.3 microns wavelength; 10 ns rise time drive pulses; III-V semiconductors; InGaAsP; charge carrier density; delay triggered optical switching; integrated optics; inverted rib waveguide type; pulse operating conditions; semiconductor lasers; subpicojoule switching energies; twin-stripe IRW lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850706
Filename
4251529
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