DocumentCode :
1011717
Title :
Large-area N-P-N power transistors
Author :
Slade, B.N.
Author_Institution :
RCA Laboratories, Princeton
Volume :
4
Issue :
2
fYear :
1957
fDate :
4/1/1957 12:00:00 AM
Firstpage :
195
Lastpage :
195
Keywords :
Alloying; Breakdown voltage; Coaxial components; Doping; Germanium alloys; Laboratories; Power dissipation; Power transistors; Pulse amplifiers; Pulse shaping methods; Stripline; Transient response; Welding;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1957.14283
Filename :
1472262
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1011717
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