• DocumentCode
    1011740
  • Title

    Addendum: Enhanced performance of 2 μm N-MOSFETs in doubly recrystallised SOS films

  • Author

    Maddox, R.L. ; Golecki, I.

  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    1002
  • Lastpage
    1003
  • Keywords
    field effect integrated circuits; insulated gate field effect transistors; ion implantation; 2 microns channel length; NMOS devices; Si ion implantation; Si-on-sapphire; amorphisation; back-channel leakage current; doubly recrystallised SOS films; field-effect channel electron mobility; monolithic IC; n+ Si gate isoplanar process; solid-phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850709
  • Filename
    4251532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011740