• DocumentCode
    1011777
  • Title

    Phase-noise behaviour of frequency dividers implemented with GaAs heterojunction bipolar transistors

  • Author

    Agarwal, K.K. ; Thompson, W.J. ; Asbeck, P.M.

  • Author_Institution
    Rockwell International Corporation, Dallas, USA
  • Volume
    21
  • Issue
    22
  • fYear
    1985
  • Firstpage
    1005
  • Lastpage
    1006
  • Abstract
    Near carrier phase-noise performance of GaAs microwave frequency dividers (4 GHz) is investigated. The divide-by-4 circuits are fabricated using heterojunction bipolar transistor (HBT) technology. The phase-noise behaviour of the HBT divider chips is correlated with transistor 1/f noise and is insensitive to bias current variations.
  • Keywords
    III-V semiconductors; bipolar transistor circuits; frequency dividers; gallium arsenide; microwave integrated circuits; random noise; GaAs heterojunction bipolar transistors; bias current variations; frequency 4 GHz; frequency dividers; microwave IC; phase-noise performance; transistor 1/ f noise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850712
  • Filename
    4251539
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011777