Title :
High-power operation of DCPBH lasers emitting at 1.52 μm wavelength
Author :
Renner, D. ; Collar, A.J. ; Greene, P.D. ; Henshall, G.D.
Author_Institution :
Standard Telecommunication Laboratories Limited, Harlow, UK
Abstract :
Double-channel planar buried heterostructure (DCPBH) lasers emitting at 1.52 μm wavelength have been made with considerably reduced current leakage. These devices have reached a maximum CW output power of 50 mW per facet at 20°C and have operated CW up to 125°C. Both these figures are the highest values yet achieved for lasers emitting in the 1.52 μm wavelength region.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; CW output power 50 mW; InGaAsP-InP double channel planar BH lasers; current leakage; high power operation; semiconductor laser; wavelength 1.52 microns;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850713
