Title :
Ultrahigh temperature and ultrahigh speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes
Author :
Wang, Michael C. ; Lin, Weisi ; Tu, Y.K.
Author_Institution :
Photonic Technol. Res., Minist. of Transp. & Commun., Tuoyan
fDate :
8/31/1995 12:00:00 AM
Abstract :
High performance 1.3 μm uncooled lasers with excellent high temperature and high speed characteristics are reported. A CW characteristic temperature of 105 K between 25 and 85°C, a maximum CW operating temperature above 170°C, and an intrinsic 3 dB modulation bandwidths estimated at ⩾23 GHz at 25°C and 15 GHz at 85°C, have been achieved. These values are among the best obtained for 1.3 μm AlGaInAs laser devices
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor lasers; 1.3 micron; 170 C; 23 GHz; 25 to 85 C; AlGaInAs-InP; CW characteristic temperature; CW operating temperature; modulation bandwidth; strain-compensated AlGaInAs/InP uncooled laser diodes; ultrahigh speed; ultrahigh temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951103
