DocumentCode
1011793
Title
Ultrahigh temperature and ultrahigh speed operation of 1.3 μm strain-compensated AlGaInAs/InP uncooled laser diodes
Author
Wang, Michael C. ; Lin, Weisi ; Tu, Y.K.
Author_Institution
Photonic Technol. Res., Minist. of Transp. & Commun., Tuoyan
Volume
31
Issue
18
fYear
1995
fDate
8/31/1995 12:00:00 AM
Firstpage
1584
Lastpage
1585
Abstract
High performance 1.3 μm uncooled lasers with excellent high temperature and high speed characteristics are reported. A CW characteristic temperature of 105 K between 25 and 85°C, a maximum CW operating temperature above 170°C, and an intrinsic 3 dB modulation bandwidths estimated at ⩾23 GHz at 25°C and 15 GHz at 85°C, have been achieved. These values are among the best obtained for 1.3 μm AlGaInAs laser devices
Keywords
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; semiconductor lasers; 1.3 micron; 170 C; 23 GHz; 25 to 85 C; AlGaInAs-InP; CW characteristic temperature; CW operating temperature; modulation bandwidth; strain-compensated AlGaInAs/InP uncooled laser diodes; ultrahigh speed; ultrahigh temperature;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951103
Filename
469155
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