Title :
Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer
Author :
Fallahi, M. ; Dion, M. ; Wasilewski, Z. ; Buchanan, M. ; Nournia, M. ; Stapledon, J. ; Barber, R.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
8/31/1995 12:00:00 AM
Abstract :
The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAs-GaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17 mA and a pulsed output power >170 mW at ~980 nm wavelength are obtained
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; surface emitting lasers; 17 mA; 170 mW; 980 nm; InGaAs-GaAs; MBE; MQW structure; circular-grating type; distributed Bragg reflector; electron beam lithography; etch-stop layer; high efficiency operation; low threshold current; strained triple quantum well; surface-emitting DBR lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951045
