DocumentCode :
1011828
Title :
Dependence of semiconductor laser linewidth on measurement time: evidence of predominance of 1/f noise
Author :
Kikuchi, Kazuro ; Okoshi, Tadashi
Author_Institution :
University of Tokyo, Department of Electronic Engineering, Tokyo, Japan
Volume :
21
Issue :
22
fYear :
1985
Firstpage :
1011
Lastpage :
1012
Abstract :
Linewidths of 1.3 ¿m InGaAsP lasers were measured by using delayed self-heterodyne set-ups with two different delay-line lengths, i.e. with two equivalent measurement times. It has been found that in high-power operation the linewidth increases as the measurement time becomes longer, and that this dependence is explained well by a calculation assuming that the 1/f noise in the FM noise spectrum is the predominant cause of the spectral broadening. The significance of this fact in coherent optical communications is discussed.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; random noise; semiconductor junction lasers; spectral line breadth; 1/ f noise; DFB laser; FM noises spectrum; InGaAsP lasers; coherent optical communications; delay-line lengths; high-power operation; measurement time; semiconductor laser linewidth; spectral broadening;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850717
Filename :
4251544
Link To Document :
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