DocumentCode
1011841
Title
A three-dimensional analytic solution for alpha of alloy junction transistors
Author
Wahl, Arthur J.
Author_Institution
Bell Telephone Labs., Inc., Allentown, Pa.
Volume
4
Issue
3
fYear
1957
fDate
7/1/1957 12:00:00 AM
Firstpage
216
Lastpage
220
Abstract
A three-dimensional analytic solution for the alpha of junction transistors with extended base region is presented in terms of arbitrary volume and surface recombination. The method also accommodates emitter and collector junctions of different size, as commonly encountered in high alpha alloy junction transistors. In principle, the solution can be carried to any desired degree of accuracy, but the large amount of labor involved in numerical evaluation of useful examples seriously impairs the practical value and for this reason the solution in its present form may well be largely of academic interest only.
Keywords
Alloying; Atmosphere; Electron devices; Etching; Geometry; Radiative recombination; Semiconductor devices; Shape; Sparks; Spontaneous emission; Stability; Telephony;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1957.14297
Filename
1472276
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