Title :
A three-dimensional analytic solution for alpha of alloy junction transistors
Author_Institution :
Bell Telephone Labs., Inc., Allentown, Pa.
fDate :
7/1/1957 12:00:00 AM
Abstract :
A three-dimensional analytic solution for the alpha of junction transistors with extended base region is presented in terms of arbitrary volume and surface recombination. The method also accommodates emitter and collector junctions of different size, as commonly encountered in high alpha alloy junction transistors. In principle, the solution can be carried to any desired degree of accuracy, but the large amount of labor involved in numerical evaluation of useful examples seriously impairs the practical value and for this reason the solution in its present form may well be largely of academic interest only.
Keywords :
Alloying; Atmosphere; Electron devices; Etching; Geometry; Radiative recombination; Semiconductor devices; Shape; Sparks; Spontaneous emission; Stability; Telephony;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1957.14297