DocumentCode
1011862
Title
Antireflection coating for laser diodes
Author
Shigihara, K. ; Aoyagi, Takahiro ; Kakimoto, Shinji ; Aiga, M. ; Ikeda, Ken-ichi
Author_Institution
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo
Volume
31
Issue
18
fYear
1995
fDate
8/31/1995 12:00:00 AM
Firstpage
1574
Lastpage
1576
Abstract
A novel design for an antireflection (AR) coating layer on facets of laser diodes (LDs) is proposed and the validity of the design is confirmed experimentally. The proposed novel AR coating consisting of multilayers is designable such that the characteristic matrix is equivalent to that of the ideal quarter wavelength single layer AR coating. Applying this idea to laser diodes with a lasing wavelength of 1.3 μm and equivalent refractive index of 3.2, a very low reflectivity of 0.08% has been realised by the stratified three layers which consist of alumina (Al2O3, 902 Å)/amorphous silicon (α-Si, 83 Å)/Al2O3 (902 Å), deposited by electron beam evaporation
Keywords
antireflection coatings; semiconductor lasers; 1.3 micron; Al2O3-Si-Al2O3; alumina/amorphous silicon/alumina; antireflection coating; characteristic matrix; electron beam evaporation; laser diodes; multilayer; quarter wavelength single layer coating; reflectivity; refractive index; stratified layer;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19951101
Filename
469161
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