Title :
Antireflection coating for laser diodes
Author :
Shigihara, K. ; Aoyagi, Takahiro ; Kakimoto, Shinji ; Aiga, M. ; Ikeda, Ken-ichi
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo
fDate :
8/31/1995 12:00:00 AM
Abstract :
A novel design for an antireflection (AR) coating layer on facets of laser diodes (LDs) is proposed and the validity of the design is confirmed experimentally. The proposed novel AR coating consisting of multilayers is designable such that the characteristic matrix is equivalent to that of the ideal quarter wavelength single layer AR coating. Applying this idea to laser diodes with a lasing wavelength of 1.3 μm and equivalent refractive index of 3.2, a very low reflectivity of 0.08% has been realised by the stratified three layers which consist of alumina (Al2O3, 902 Å)/amorphous silicon (α-Si, 83 Å)/Al2O3 (902 Å), deposited by electron beam evaporation
Keywords :
antireflection coatings; semiconductor lasers; 1.3 micron; Al2O3-Si-Al2O3; alumina/amorphous silicon/alumina; antireflection coating; characteristic matrix; electron beam evaporation; laser diodes; multilayer; quarter wavelength single layer coating; reflectivity; refractive index; stratified layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19951101
