Title :
HEMT 60 GHz amplifier
Author :
Berenz, J. ; Nakano, Kaoru ; Hsu, Ting-Ih ; Goel, J.
Author_Institution :
TRW Electronic Systems Group, Redondo Beach, USA
Abstract :
A high electron mobility transistor (HEMT) amplifier has been fabricated which exhibits 7.5 dB gain at 61 GHz. This result was obtained with a quarter-micrometre gate-length depletion-mode HEMT. Reduction of source-gate resistance and gate length are primarily responsible for this performance. The letter describes the materials and device processing technology developed for fabricating these devices.
Keywords :
high electron mobility transistors; microwave amplifiers; solid-state microwave circuits; HEMT amplifier; depletion-mode HEMT; device processing technology; frequency 60 GHz; gain 7.5 dB; gate length; microwave amplifier; source-gate resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850729
