Title :
High-temperature operation of InGaAs/InGaAsP compressive-strained QW lasers with low threshold currents
Author :
Nobuhara, Hiroyuki ; Tanaka, Kazuhiro ; Yamamoto, Tsuyoshi ; Machida, Toyotoshi ; Fujii, Takuya ; Wakao, Kiyohide
Author_Institution :
Optical Devices Lab., Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We investigated the influence of the band gap wavelength of barrier layers and separate confinement heterostructure (SCH) layers lambda /sub SCH/ on the high-temperature operation of InGaAs/InGaAsP compressive-strained quantum-well (QW) lasers. The optimum lambda /sub SCH/ was 1.2 mu m, at which carriers were sufficiently confined into quantum wells. The QW laser with lambda /sub SCH/ = 1.2 mu m exhibited low threshold currents of 2.3 mA at 20 degrees C and 9.7 mA at 100 degrees C and CW lasing up to 150 degrees C.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.2 mum; 100 degC; 150 degC; 2.3 mA; 20 degC; 9.7 mA; CW lasing; InGaAs-InGaAsP; InGaAs/InGaAsP; QW lasers; SCH layer; band gap wavelength; barrier layers; compressive-strained; high-temperature operation; low threshold currents; quantum-well; separate confinement heterostructure; Carrier confinement; Diode lasers; Indium gallium arsenide; Optical devices; Optical transmitters; Photonic band gap; Potential well; Quantum well lasers; Temperature dependence; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
