Title :
The "Thyristor"—A new high-speed switching transistor
Author :
Mueller, C.W. ; Hilibrand, J.
Author_Institution :
RCA Laboratories, Princeton, N. J.
Abstract :
A description is given of the construction and characteristics of a versatile and novel semiconductor device, called a "Thyristor," that may be operated as a bistable element switching to a high conductivity mode or as a more conventional high-frequency transistor, either in switching or amplifying circuitry. The Thyristor has thyratron-like characteristics that closely approach those of an ideal switch. However, the Thyristor, unlike the thyratron, can be turned off readily by the control element. The open-state current is about 2 microamperes and the closed-state voltage drop is 0.3 to 0.5 volt. The unit can be switched into the high conductance mode in less than 0.1 microsecond with a pulse energy of 10-4ergs. It can be turned off with a pulse energy of about 10-1ergs in times of the order of 0.1 microsecond. The bistable operation depends upon a new type of semiconductor contact that collects holes at low current densities and injects electrons at high current densities. The electron alpha of the injector increases as a power law function of current and greatly aids in obtaining device reproducibility. These injector properties can be described in terms of a tunneling mechanism.
Keywords :
Charge carrier processes; Conductivity; Current density; Electrons; Semiconductor devices; Switches; Switching circuits; Thyratrons; Thyristors; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1958.14318