Title :
MOSFET degradation due to hot-carrier effect at high frequencies
Author :
Subrahmaniam, Rathnam ; Chen, John Y. ; Johnston, Allan H.
Author_Institution :
Boeing Aerosp. & Electron., Seattle, WA, USA
Abstract :
Hot-carrier-induced degradation due to AC stress on short-channel MOSFETs is discussed. It is observed that pulsed gate voltage stressing with a short falltime (0.7 ns) can cause additional lifetime degradation in the form of drain-current reduction. The AC-enhanced degradation is more pronounced at higher frequencies.<>
Keywords :
high-frequency effects; hot carriers; insulated gate field effect transistors; semiconductor device testing; 0.7 ns; AC stress; drain-current reduction; high frequencies; hot-carrier-induced degradation; lifetime degradation; pulsed gate voltage stressing; short falltime; short-channel MOSFETs; Degradation; Frequency measurement; Hot carrier effects; Hot carriers; MOSFET circuits; Packaging; Pulse generation; Stress measurement; Testing; Voltage;
Journal_Title :
Electron Device Letters, IEEE
