Title :
InGaAs-GaAs-InGaP distributed feedback buried heterostructure strained quantum-well lasers for high-power operation at 0.98 mu m
Author :
Sin, Y.K. ; Horikawa, H. ; Kamijoh, T.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Data are presented on device results from InGaAs-GaAs distributed feedback buried heterostructure (DFB BH) strained-quantum-well lasers with InGaP cladding layers. DFB BH lasers with a p-n InGaP current blocking junction entirely grown by a three-step MOVPE on GaAs substrates show a low laser threshold of 3.2 mA and a high output power of 41 mW with single-longitudinal-mode operation, both measured CW at RT. The monomode oscillation is obtained even at the injection current of 140 mA (44 times the laser threshold) with the side-mode suppression ratio of 35 dB and the temperature sensitivity of Bragg modes being 0.5 AA/ degrees C measured between 20 and 40 degrees C.<>
Keywords :
distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 0.98 mum; 140 mA; 20 to 40 degC; 3.2 mA; 41 mW; Bragg modes; CW; DFB lasers; InGaAs-GaAs-InGaP; RT; buried heterostructure; cladding layers; device results; distributed feedback; high output power; high-power operation; injection current; laser threshold; low laser threshold; monomode oscillation; p-n current blocking junction; side-mode suppression ratio; single-longitudinal-mode operation; strained quantum-well lasers; temperature sensitivity; three-step MOVPE; Current measurement; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser feedback; P-n junctions; Power generation; Power lasers; Power measurement;
Journal_Title :
Photonics Technology Letters, IEEE
