DocumentCode :
1012108
Title :
High field emission in germanium point-contact diodes
Author :
Wallis, G. ; Battey, J.F.
Author_Institution :
Sylvania Electric Products, Woburn, Mass.
Volume :
5
Issue :
1
fYear :
1958
Firstpage :
19
Lastpage :
21
Abstract :
The effects have been examined of small changes of barrier height on the reverse current of high inverse voltage germanium point-contact diodes. The barrier height was varied by changing the ambient gas. The experimental results are given quantitative interpretation by a field emission theory in the region from about 10 volts to about 150 volts, where other effects become important. Examination of some 50 diodes has shown that diodes which draw low reverse currents behave according to this theory.
Keywords :
Conductivity; Dielectric constant; Electron emission; Gases; Germanium; Schottky diodes; Semiconductor diodes; Semiconductor impurities; TV; Tunneling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1958.14322
Filename :
1472365
Link To Document :
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